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cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 1/14 MTC4603H8 cystek product specification n- and p-channel enhancement mode mosfet MTC4603H8 features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTC4603H8-0-t6-g dfn 5 6 (pb-free lead plating & halogen-free package) 3000 pcs / tape & reel dfn5 6 MTC4603H8 g gate s source d drain n-ch p-ch bv dss 30v -30v i d @v gs =10v(-10v), t a =25 c 10.3a -9.6a i d @v gs =10v(-10v), t c =25 c 32.8a -30.3a r dson(typ) @v gs =10v(-10v) 10.0m 15.0m r dson(typ) @v gs =4.5v(-4.5v) 12.7m 21.6m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products pin 1 pin 1 product name
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 2/14 MTC4603H8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 30 -30 gate-source voltage v gs 20 20 v t a =25 c, v gs =10v (-10v) 10.3 -9.6 t a =70 c, v gs =10v (-10v) i dsm 8.2 -7.7 t c =25 c, v gs =10v (-10v) 32.8 -30.3 continuous drain current t c =100 c, v gs =10v (-10v) i d 20.7 -19.2 pulsed drain current (note 1 & 2) i dm 46 -43 single pulse avalanche current @ l=0.1mh i as 30 34 a single pulse avalanche energy (note 4) e as 60.5 108 mj t a =25 c 2.5 (note 3) t a =70 c p dsm 1.6 (note 3) t c =25 c 25 power dissipation t c =100 c p d 10 w operating junction and storage te mperature range tj; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 5 thermal resistance, junction-to-ambient, max r ja 50 (note 3) c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in2 copper pad of fr-4 board, t 10s; 125 c/w when mounted on minimum copper pad. 4. for n-channel, l=1mh, v dd =15v, v gs =10v, i as =11a; for p-channel, l=3mh, v dd =-15v, v gs =-10v, i as =-8.5a n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 v ds =24v, v gs =0v i dss - - 25 a v ds =24v, v gs =0, tj=125 c - 10 13 i d =6a, v gs =10v *r ds(on) - 12.7 17 m i d =4a, v gs =4.5v *g fs - 7 - s v ds =10v, i d =6a dynamic ciss - 788 1180 coss - 91 - crss - 73 - pf v ds =25v, v gs =0v, f=1mhz
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 3/14 MTC4603H8 cystek product specification *td (on) - 8.8 - *tr - 18 - *td (off) - 37 - *tf - 6.6 - ns v ds =15v, i d =6a, v gs =10v, r g =1 *qg - 10.8 16.2 *qgs - 2.2 - *qgd - 5.6 - nc v ds =24v, i d =6a, v gs =4.5v body diode *v sd - 0.83 1.2 v v gs= 0v, i s =6a *trr - 8.9 - ns *qrr - 3.9 - nc i f =6a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% p-channel electrical characteristics (tc=25c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0v, i d =-250 a v gs(th) -1.0 - -2.5 v v ds =vgs, i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-24v, v gs =0v i dss - - -25 a v ds =-24v, v gs =0v, tj=125 c - 15.0 20 i d =-6a, v gs =-10v *r ds(on) - 21.6 30 m i d =-4a, v gs =-4.5v *g fs - 11 - s v ds =-10v, i d =-6a dynamic ciss - 1471 2210 coss - 151 - crss - 132 - pf v ds =-25v, v gs =0v, f=1mhz *td (on) - 11.2 - *tr - 22 - *td (off) - 61.2 - *tf - 11 - ns v ds =-15v, i d =-6a, v gs =-10v, r g =1 *qg - 18 27 *qgs - 4.8 - *qgd - 8.6 - nc v ds =-24v, i d =-6a, v gs =-4.5v body diode *v sd - -0.84 -1.2 v v gs =0v, i s =-6a *trr - 12.4 - ns *qrr - 6.6 - nc i f =-6a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 4/14 MTC4603H8 cystek product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 5/14 MTC4603H8 cystek product specification recommended stencil design note : 1. stencil thickness 5 mil (0.127mm) 2. may need to be adjusted to specific requirements.
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 6/14 MTC4603H8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 5 10 15 20 25 30 35 40 012345 v ds , drain-source voltage(v) i d , drain current(a) 3.5 v v gs =2.5v 3 v 10v, 9v, 8v, 7v, 6v, 5v,4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =6a r ds( on) @tj=25c : 10m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =6a
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 7/14 MTC4603H8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.1 1 10 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12162024 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =6a v ds =24v v ds =15v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds( on) limited t a =25c, tj=150c, v gs =10v r ja =50c/w, single pulse 1s 100ms maximum drain current vs junctiontemperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 t j , junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v r ja =50c/w
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 8/14 MTC4603H8 cystek product specification typical characteristics(cont.) : q1( n-channel) single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w typical transfer characteristics 0 5 10 15 20 25 30 35 40 012345 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50 c/w
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 9/14 MTC4603H8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 5 10 15 20 25 30 35 40 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -9v, -8v, -7v,-6v,-5v v gs =-2.5v -3v -4v -3.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-10v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468 -i s , source drain current(a) -v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 10 v gs =0v tj=25c tj=150c drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-6a r ds( on) @tj=25c : 15m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) i d =-6a
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 10/14 MTC4603H8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.1 1 10 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 36 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-6a v ds =-24v v ds =-15v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=150c, v gs =-10v r ja =50c/w, single pulse 1s 1ms r ds( on) limited maximum drain current vs junction temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v r ja =50c/w
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 11/14 MTC4603H8 cystek product specification typical characteristics(cont.) : q2(p-channel) single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w typical transfer characteristics 0 5 10 15 20 25 30 35 40 012345 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 12/14 MTC4603H8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 13/14 MTC4603H8 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c921h8 issued date : 2016.11.07 revised date : 2016.11.08 page no. : 14/14 MTC4603H8 cystek product specification dfn5 6 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.80 1.00 0.031 0.039 e 5.70 5.90 0.224 0.232 a1 0.00 0.05 0.000 0.002 e 1.27 bsc 0.050 bsc b 0.35 0.49 0.014 0.019 h 5.95 6.20 0.234 0.244 c 0.254 ref 0.010 ref l1 0.10 0.18 0.004 0.007 d 4.90 5.10 0.193 0.201 g 0.60 ref 0.024 ref f 1.60 ref 0.063 ref k 1.60 ref 0.063 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 4603 date code device ame n 8-lead dfn5 6 plastic package cys package code : h8

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